PART |
Description |
Maker |
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
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BUK7505-30A BUK7505-30A_2 |
TrenchMOS transistor Standard level FET 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system TrenchMOS TM transistor TrenchMOS(tm) transistor Standard level FET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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BUK7615-100A BUK7615-100A_1 |
TrenchMOS transistor Standard level FET TrenchMOS TM transistor Standard level FET From old datasheet system TrenchMOS(tm) transistor Standard level FET
|
NXP Semiconductors Philips
|
BUK7540-100A BUK7540-100A_1 |
TrenchMOS transistor Standard level FET TrenchMOS TM transistor Standard level FET From old datasheet system TrenchMOS(tm) transistor Standard level FET
|
Philips Semiconductors
|
PHP37N06T PHP37N06 |
TrenchMOS transistor Standard level FET TrenchMOS transistor Logic level FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
|
MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
PHP21N06LT PHD21N06LT PHP21N06 PHB21N06LT PHB_PHD_ |
N-channel TrenchMOS(tm) transistor Logic level FET From old datasheet system N-channel TrenchMOS transistor Logic level FET
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
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